p p jq2460 november 16,2015 - rev.02 page 1 6 0v n - c hannel enhancement mode mosfet voltage 6 0 v current 3 .2 a dfn 2 020 b - 6 l f eatures ? r ds(on) , v gs @ 10 v , i d @ 3 .2 a< 75 m ? ? r ds(on) , v gs @ 4 .5 v, i d @ 2 .0 a< 9 0 m ? ? advanced trench process technology ? high densi ty cell design for ultra low on - resistance ? lead free in comply with eu rohs 20 11 / 6 5/e u directives. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: dfn2020 b - 6l package ? terminals: solderable per mil - std - 750, method 2026 ? marking: 460 parameter symbol limit units drain - source voltage v ds 6 0 v gate - source voltage v gs + 20 v continuous drain current i d 3.2 a pulsed drain current i dm 1 2.8 a power dissipation t a =25 o c p d 2. 0 w derate above 25 o c 16 m w/ o c opera tin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal r esistance - j unction to ambient , t<10s (note 3 ) r ja 62.5 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p jq2460 november 16,2015 - rev.02 page 2 e lectrical c haracteristi cs (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0 v, i d = 25 0ua 6 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250 ua 1.0 1. 8 2. 5 v drain - source on - state resi stance r ds(on) v gs = 10 v, i d = 3.2 a - 53 75 m gs = 4.5 v, i d = 2.0 a - 61 90 zero gate voltage drain current i dss v ds = 48 v, v gs =0v - - 1 u a gate - source leakage current i gss v gs = + 20 v, v ds =0v - - + 10 0 n a dynamic (note 6 ) total gate charge q g v ds = 48 v, i d = 3.0 a, v gs = 10v (note 1 , 2 ) - 9.3 - nc gate - sour ce charge q gs - 2.2 - gate - drain charge q gd - 1.9 - input capacitance ciss v ds = 15 v, v gs = 0 v, f=1.0mhz - 509 - pf output capacitance coss - 47 - reverse transfer capacitance crss - 23 - turn - on delay time t d (on) v dd = 30 v, i d = 3.0 a, v g s = 10v, r g = 3. 3 (note 1 , 2 ) - 3.2 - ns turn - on rise time tr - 9.7 - turn - o ff delay time t d (off) - 18.5 - turn - o ff fall time tf - 6.4 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 3.2 a diode forward voltage v sd i s = 1 a, v gs = 0 v - 0.7 5 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. the maximum current rating is package limited. 4. repetitive rating, pulse width limited by junction temperature tj(max)=1 50c. ratings are based on low frequency and duty cycles to keep initial tj =25c. 5. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. m ount ed on a 1 inch 2 with 2oz. square pad of copper . 6. guaranteed by design, not subjec t to product ion testing.
p p jq2460 november 16,2015 - rev.02 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p jq2460 november 16,2015 - rev.02 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage .
p p jq2460 november 16,2015 - rev.02 page 5 part no packing code version mounting pad layout dfn2020 b - 6l dimension u nit: mm dfn2020 b - 6l u nit: mm part no packing code package type packing type marking ver sion PJQ2460 _ r 1_00001 dfn2020 b - 6l 3k pcs / 7
p p jq2460 november 16,2015 - rev.02 page 6 dis claimer
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